5SHY6545L0001 AC10272001R0101 5SXE10-0181 可控硅晶体模块

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技术规格

IGCT使变流装置在功率、可靠性、开关速度、效率、成本、重量和体积等方面都取得了巨大进展，给电力电子成套装置带来了新的飞跃。IGCT是将GTO芯片与反并联二极管和栅极驱动电路集成在一起，再与其栅极驱动器在外围以低电感方式连接，结合了晶体管的稳定关断能力和晶闸管低通态损耗的优点，在导通阶段发挥晶闸管的性能，关断阶段呈现晶体管的特性。IGCT具有电流大、电压高、开关频率高、可靠性高、结构紧凑、损耗低等特点，而且造成本低，成品率高，有很好的应用前景。采用晶闸管技术的GTO是常用的大功率开关器件，它相对于采用晶体管技术的IGBT在截止电压上有更高的性能，但广泛应用的标准GTO驱动技术造成不均匀的开通和关断过程，需要高成本的dv/dt和di/dt吸收电路和较大功率的栅极驱动单元，因而造成可靠性下降，价格较高，也不利于串联。但是，在大功率MCT技术尚未成熟以前，IGCT已经成为高压大功率低频交流器的优选方案。

IGCT与GTO相似，也是四层三端器件，GCT内部由成千个GCT组成，阳极和门极共用，而阴极并联在一起。与GTO有重要差别的是IGCT阳极内侧多了缓冲层，以透明（可穿透）阳极代替GTO的短路阳极。导通机理与GTO完全一样，但关断机理与GTO完全不同，在IGCT的关断过程中，GCT能瞬间从导通转到阻断状态，变成一个pnp晶体管以后再关断，所以它无外加du/dt限制；而GTO必须经过一个既非导通又非关断的中间不稳定状态进行转换（即”GTO区”），所以GTO需要很大的吸收电路来抑制重加电压的变化率du/dt。阻断状态下IGCT的等效电路可认为是一个基极开路、低增益pnp晶体管与栅极电源的串联。

IGCT has made significant progress in power, reliability, switching speed, efficiency, cost, weight, and volume of converter devices, bringing new leaps to complete power electronic devices. IGCT integrates GTO chips with anti parallel diodes and gate drive circuits, and then connects them with gate drivers in a low inductance manner on the periphery. It combines the stable turnoff capability of transistors and the advantages of low on state losses of thyristors, and leverages the performance of thyristors during the conduction phase. The turnoff phase exhibits the characteristics of transistors. IGCT has the characteristics of high current, high voltage, high switching frequency, high reliability, compact structure, low loss, and low manufacturing cost, high yield, and good application prospects. GTO using thyristor technology is a commonly used high-power switching device, which has higher performance in cutoff voltage compared to IGBT using transistor technology. However, the widely used standard GTO driving technology causes uneven turn-on and turn-off processes, requiring high cost dv/dt and di/dt absorption circuits and high-power gate driving units, resulting in decreased reliability, higher price, and unfavorable series connection. However, before the maturity of high-power MCT technology, IGCT had become the preferred solution for high-voltage, high-power, and low-frequency AC converters.

IGCT, similar to GTO, is also a four layer three terminal device. The GCT is composed of thousands of GCTs inside, with the anode and gate shared, and the cathode connected in parallel. The important difference from GTO is that IGCT has an additional buffer layer on the inner side of the anode, replacing GTO’s short-circuit anode with a transparent (penetrable) anode. The conduction mechanism is exactly the same as GTO, but the turn off mechanism is completely different from GTO. During the turn off process of IGCT, GCT can instantly transition from conduction to blocking state, become a pnp transistor, and then turn off again, so it has no external du/dt limitation; And GTO must undergo a transition through an intermediate unstable state that is neither conducting nor turning off (i.e. the “GTO region”), so GTO requires a large absorption circuit to suppress the rate of change of the re applied voltage du/dt. The equivalent circuit of IGCT in the blocking state can be considered as a series connection of a base open circuit, low gain pnp transistor, and gate power supply.

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